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FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
? 650V @T J = 150 ° C
? Typ. R ds(on) = 0.22 Ω
? Ultra low gate charge (typ. Qg=55nC)
? Low effective output capacitance (typ. Coss.eff=110pF)
? 100% avalanche tested
? RoHS C ompliant
December 200 8
SuperFET
Description
SuperFET TM is, Fa i rchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
TM
G D S
TO-220
FCP Series
G D S
TO-220F
FCPF Series
S
Absolute Maximum Ratings
Symbol
V DSS
Drain-Source Voltage
Parameter
FCP16N60
FCPF16N60
600
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
16
10.1
16*
10.1*
A
A
I DM
Drain Current
- Pulsed
(Note 1)
48
48*
A
V GSS
Gate-Source voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
450
16
20.8
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
167
1.33
37.9
0.3
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75
62.5
FCPF16N60
3.3
62.5
Unit
° C/W
° C/W
?200 8 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. B 1
1
www.fairchildsemi.com
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